Synthesis, characterization and physical properties of layered bismuthide PtBi2
Abstract
We report details of single crystal growth of stoichiometric bismuthide PtBi2 whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the c-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of a=b=6.553, c=6.165. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The T-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor β-PdBi2.
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