Theory of Orbital Susceptibility on Excitonic Insulator
Abstract
We study the temperature dependence of the orbital susceptibility of an excitonic insulator on the basis of a two-band model. It is shown that a drastic change (an anomalous enhancement) in susceptibility as a function of temperature occurs owing to the occurrence of additional orbital susceptibility due to the excitonic gap. We calculate explicitly the temperature dependence of orbital susceptibility for a model of Ta2NiSe5, and show that the result is consistent with experimental results.
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