Hall measurement of ultra thin vanadium dioxide thin films
Abstract
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO2 films grown on Si/SiO2 substrate. Experimental results suggest that electrons are the predominant carrier both in the semiconducting and metallic phases. The decrease of the resistivity with increasing temperature is mainly caused by the increase in the number density of charge carriers. The temperature dependence of the carrier concentration indicates the VO2 films has a band gap of 0.400.09 ev in the semiconducting phase. Analysis of hall effect data based on a composite cube model suggests that the sample has some untransitional phase with a length that is 1/4 of the grains.
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