Physical properties of KMgBi single crystals
Abstract
KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.
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