Channeling and Radiation of 855 MeV Electrons and Positrons in Straight and Bent Tungsten (110) Crystals
Abstract
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the software package. The results of simulations for a broad range of bending radii are analyzed in terms of the channel acceptance, dechanneling length, and spectral distribution of the emitted radiation. Comparison of the results with predictions of other theories as well as with the data for (110) oriented diamond, silicon and germanium crystals is carried out.
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