Power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n-junctions. II. Energy efficiency
Abstract
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load, amplitude and duration tR of voltage pulses it is shown that there exist optimal sets of values for the device area, energy and absorption coefficient for triggering illumination, which provide the maximal general efficiency of the switch about 0.92. All three types of switches have almost identical efficiencies at short tR, and in case of long tR photothyristors possess a noticeable advantage among them.
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