Possibility of Realizing Quantum Spin Hall Effect at Room Temperature in Stanene/Al2O3(0001)
Abstract
Two-dimensional quantum spin Hall (QSH) insulators with reasonably wide band gaps are imperative for the development of various innovative technologies. Through systematic density functional calculations and tight-binding simulations, we found that stanene on α-alumina surface may possess a sizeable topologically nontrivial band gap (~0.25 eV) at the point. Furthermore, stanene is atomically bonded to but electronically decoupled from the substrate, providing high structural stability and isolated QSH states to a large extent. The underlying physical mechanism is rather general, and this finding may lead to the opening of a new vista for the exploration of QSH insulators for room temperature device applications.
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