Antiferroelectric topological insulators in orthorhombic $A$MgBi compounds ($A=$ Li, Na, K)

Abstract

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an $ABC$ family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these $ABC$ compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.