Selective reflection from Rb layer with thickness below λ/12 and applications

Abstract

We have studied the peculiarities of selective reflection from Rb vapor cell with thickness L < 70 nm, which is over an order of magnitude smaller than the resonant wavelength for Rb atomic D1 line λ = 795 nm. A huge (≈ 240 MHz) red shift and spectral broadening of reflection signal is recorded for L = 40 nm caused by the atom-surface interaction. Also completely frequency resolved hyperfine Paschen-Back splitting of atomic transitions to four components for 87Rb and six components for 85Rb is recorded in strong magnetic field (B > 2 kG).

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