Manifestation of T-Exciton Migration in the Kinetics of Singlet Fission in Organic Semiconductors

Abstract

Kinetics of singlet fission in organic semiconductors, in which the excited singlet state (S_1) spontaneously splits into a pair of triplet (T) excitons, is known to be strongly influenced by back geminate annihilation of TT-pairs. We show that this influence can be properly described only by taking into account the diffusive exciton migration. The migration effect is treated in the model of two kinetically coupled states: the intermediate state of interacting TT-pairs and the state of migrating excitons. Within this model the singlet fission (including magnetic field effects) is studied as applied to the fluorescence decay kinetics (FDK) I_{S_1}(t) for S_1-state. The analysis shows that migration strongly affects the FDK resulting, in particular, in the universal long-time dependence I_{S_1}(t) \sim t^{-3/2}. The model accurately describes the FDK, recently observed for a number of systems. Possible applications of the considered model to the analysis of mechanisms of migration, using experimentally measured FDK, are briefly discussed.