Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
Abstract
The interfacial band configuration of the high-k dielectric Al2O3 deposited at 120C by atomic layer deposition (ALD) on boron- and phosphorus-doped hydrogen-terminated (111) diamond was investigated. Performing X-ray photoelectron spectroscopy measurements of core level binding energies and valence band maxima values, the valence band offsets of both heterojunctions are concluded to be EV = 1.8 eV and EV = 2.7 eV for the Al2O3/H(111)p and the Al2O3/H(111)n respectively. The ALD Al2O3 bandgap energy was measured from the O 1s photoelectron energy loss spectra to be EG Al2O3 = 7.1 eV. The interfacial band diagram configuration is concluded to be of type II for both Al2O3/H(111)p and Al2O3/H(111)n heterostructures having conduction band offsets of EC = 0.2 eV and EC = 1.1 eV respectively. The use of doped (111) hydrogen-terminated diamond for developing future diamond MOSFET is discussed.
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