Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction

Abstract

The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction. The reason for the same is attributed to the role of larger electronegativity of Ni as compared to Mg at 10 K and ionization of impurity states at 100 K. The above behavior is confirmed by performing the Hall measurements.