Transfer doping of Graphene by Species of Extreme Work Function

Abstract

Density functional calculations are used to explain the charge transfer doping mechanism by which species physisorptively bonded to graphene can increase its free hole or electron density, without giving rise to defects, and thus maintain a high carrier mobility. Typical dopants studied are FeCl3, AuCl3, SbF5, HNO3, MoO3, Cs2O and O2. These systems do not break the {\pi} bonding of the basal plane are particularly important as these do not degrade the carrier mobility. In contrast, more reactive radicals like -OH cause a puckering of the basal plane and thereby act as defects.