Extraction of built-in potential of organic diodes from current-voltage characteristics

Abstract

Physics based analytic equations for charge carrier profile and current density are derived by solving the carrier transport and the continuity equations for metal-intrinsic semiconductor-metal diodes. Using the analytic models a physics based method is developed to extract the built-in potential Vbi from current density-voltage (J-V) characteristics. The proposed method is thoroughly validated using numerical simulation results. After verifying the applicability of the proposed theory on experimentally fabricated organic diodes, Vbi is extracted using the present method showing a good agreement with the reported value.

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