The role of band filling in tuning the high field phases of URu2Si2
Abstract
We present a detailed study of the low temperature and high magnetic field phases in the chemical substitution series URu2Si2-xPx using electrical transport and magnetization in pulsed magnetic fields up to 65T. Within the hidden order region (0 \ x\ 0.035) the high field ordering is robust even as the hidden order temperature is suppressed. Earlier work shows that for 0.035 \ x \ 0.26 there is a Kondo lattice with a no-ordered state that is replaced by antiferromagnetism for 0.26 \ x 0.5. We observe a simplified continuation of the high field ordering in the no-order x-region and an enhancement of the high field state upon the destruction of the antiferromagnetism with magnetic field. These results closely resemble what is seen for URu2-xRhxSi2The concentration in this paper is defined as URu2-xRhxSi2 while the chemical formula in the literature is given as U(Ru1-xRhx)2Si2 [24-26], from which we infer that charge tuning uniformly controls the ground state of URu2Si2, regardless of whether s/p or d-electrons are replaced. This provides guidance for determining the specific factors that lead to hidden order versus magnetism in this family of materials.
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