Interconnection of point defect parameters in solids with bulk properties: Application to diamond

Abstract

We show that the values of the defect entropy and the defect enthalpy for the vacancy formation in diamond, have a ratio which is comparable to the one predicted by a model suggested four decades ago. This model, which interconnects the formation Gibbs energy with the bulk elastic and expansivity data, has been also recently found of value in high $T_c$-superconductors as well as in glass-forming liquids.