Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
Abstract
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe2/SiO2 samples we observe mobilities of 12 000 cm2/Vs. Magnetic field dependent resistance measurements on these samples show a peak in the conductivity at low magnetic field. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hBN show a much higher mobility of up to 120 000 cm2/Vs. However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic field a resistance peak appears, which we ascribe to a size effect, due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors, due to complete lifting of the spin and valley degeneracy.
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