Band structure of a IV-VI black phosphorus analogue, the thermoelectric SnSe

Abstract

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.