Effect of chiral selective tunneling on quantum transport in magnetic topological-insulator thin films

Abstract

The electronic transport properties in magnetically doped ultra-thin films of topological-insulators is investigated by using Landauer-buttiker formalism. The chiral selective tunneling is addressed in such systems which leads to transport gap and as a consequence current blocking. This quantum blocking of transport occurs when the magnetic states with opposite chirality are aligned energetically. This can be obsereved when an electron tunnels through a barrier or well of magnetic potential induced by the exchange field. It is proved and demonstrated that this chiral transition rule fails when structural inversion asymmetric potential or an in-plane magnetization is turning on. This new finding is useful to interpret quantum transport through topological-insulator thin films especially to shed light on longitudinal conductance behavior of quantum anomalous Hall effect. Besides, one can design electronic devices by means of magnetic topological-insulator thin films based on the chiral selective tunneling leading to negative differential resistance.