Valley polarization generated in 3-dimensional group-IV monochalcogenids

Abstract

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear polarization-resolved transmission measurement together, we report that three pairs of valleys, which feature opposite optical absorption, existing in the 3-dimensional (3D) group-IV monochalcogenids. By applying the linearly-polarized light, valley polarization is successfully generated for the first time in a 3D system, which opens a new direction for the exploration of the valley materials and provides a good platform for the photodetector and valleytronic devices. Valley modulation versus the in-plane strain in GeSe is also studied, suggesting an effective way to get the optimized valleytronic properties.