Band structure of Cd3As2 from Shubnikov - de Haas and de Haas - van Alphen effects
Abstract
Experimental values of SdH and dHvA periods and cyclotron effective masses found by Rosenman and Doi et al. have been compared with the theoretical predictions derived in this work for a tetragonal narrow gap semiconductor. By the least square fit method the values of band parameters were obtained. It has been established that Cd3As2 has inverted band structure resembling HgTe under tensile stress.
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