Chaotic states of rf biased Josephson fluxonic diode

Abstract

The results of chaos simulations in Josephson Fluxonic Diode (JFD) subject to the magnetic field, rf driving and dc biasing currents in the RCSJ model are reported. The dynamic behavior of this nonlinear device is mapped as a function of loss, bias, frequency and amplitude of rf excitation which leads to find sustainable fluxon oscillation regions in microwave application. As a result, chaos does not happen if either the dc bias or the rf excitation is below specific value, but the loss term can change this state without affected by rf frequency. An attempt is made to explain the boundaries of the chaotic region in terms of parameter maps.