Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2 and CuGaSe2 including a detailed analysis of band-resolved transmittances
Abstract
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe2/Fe(001) and Fe/CuGaSe2/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the first-principles calculations, we find that spin-dependent coherent tunneling transport of 1 wave functions yields a relatively high magnetoresistance (MR) ratio in both the MTJs. We carry out a detailed analysis of the band-resolved transmittances in both the MTJs and find an absence of the selective transmission of 1 wave functions in some energy regions a few eV away from the Fermi level due to small band gaps in CuInSe2 and CuGaSe2.
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