Determination of the critical growth rate and growth temperature for group-III elements segregation using two exchanges Kinetic Model

Abstract

Segregation of group-III elements during the molecular-beam epitaxy growth of III-V compounds leads to a non-abrupt interface. The composition asymmetry in the structures such as quantum wells, quantum dots, and superlattices, in turn, leads to the non-abrupt electronic band alignments that changes the optoelectronic properties of those quantum structures. We have studied the concentration profile of the group-III atoms for different growth parameters using two exchanges Kinetic Model and have determined the critical growth temperature and growth rate regions for the growth of structures with less than 10% segregation of group-III atoms.