Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10: an x-ray spectroscopy study

Abstract

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce M4,5 edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs2Al10. Both substitutions have a strong impact on the unusual high Neel temperature, TN=28.5\,K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs2Al10 being representative for the Re and Ir substituted compounds. The impact of electron- and hole-doping on the hybridization between conduction and 4f electrons is related to the amount of f0 in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of cf-hybridization strength and enhanced TN is discussed. The direction and doping dependence of the circular dichroism is in agreement with strong Kondo screening along the crystallographic a direction.

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