Investigation of the Electronical and Optical Properties of Quantum Well Lasers with Slightly Doped Tunnel Junction

Abstract

We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a nonlinear S-shape I-V characteristic.It was also found that the internal quantum efficiency measured by 21% and 87.3% for the TJ LD and the conventional LD, respectively. Furthermore, compared with the conventional LD, it was found that we could achieve 15 nm broadband spectrum from the TJ LD due to lasing dynamics reflects the current dynamics. The results may also lead to the realization of more applications.