Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers

Abstract

To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ were deposited on the insulating ferromagnet EuS (100) in situ. AC susceptibility indicates magnetic anomalies between $T\approx30~\mathrm{K}$ and $T\approx60~\mathrm{K}$, well above the Curie temperature $T_C \approx 15~\mathrm{K}$ of EuS. When the Fermi level is close to the Dirac point and the surface state dominates the electric conduction, sharp increases in resistance with decreasing temperatures were observed concurrently with the magnetic anomalies. Positive-negative magnetoresistance crossovers were observed at the Curie temperature, which seem only to appear when the sheet resistance exceeds the Mott-Ioffe-Regel limit $h/e^2$. A two-stage gap-opening process due to magnetic proximity is proposed.