Laser Annealing for Radiatively Broadened MoSe2 grown by Chemical Vapor Deposition

Abstract

We report on a laser annealing procedure which greatly improves the quality of suspended monolayers of chemical vapor deposition (CVD) grown MoSe2. Annealing with a green laser locally heats the suspended flake to approximately 600 K, which both removes contaminants and reduces strain gradients. At 4 K, we observe linewidths as narrow as 3.5 meV (1.6nm) full-width at half-max (FWHM) for both photoluminescence (PL) and reflection. Large peak reflectances up to 47% are also observed. These values are comparable to those of the highest quality hexagonal boron nitride (hBN) encapsulated samples. We demonstrate that this laser annealing process can yield highly spatially homogeneous samples, with the length scale of the homogeneity limited primarily by the size of the suspended area. Annealed regions are very stable, exhibiting negligible deterioration over 24 hours at cryogenic temperatures. The annealing method is also very repeatable, with substantial improvements of sample quality on every spot (> 40) tested.