Properties of ferromagnetic Josephson junctions for memory applications

Abstract

In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd0.99Fe0.01-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical characterization of such junctions, in comparison with standard Nb-Al/AlOx-Nb tunnel junctions. The use of microwaves to tune the switching parameters of magnetic Josephson junctions is a step in the development of novel addressing schemes aimed at improving the performances of superconducting memories.

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