Search for alternative magnetic tunnel junctions based on all-Heusler stacks
Abstract
By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe3Al/BiF3/Fe3Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the search for a novel materials platform for high-performance magnetic tunnel junctions. Various geometries of the Fe3Al/BiF3/Fe3Al structure have been analyzed, demonstrating that a barrier of less than 2~nm yields a tunneling magneto-resistance in excess of 25,000~\% at low bias, without the need for the electrodes to be half-metallic. Importantly, the presence of a significant spin gap in Fe3Al for states with 1 symmetry along the stack direction makes the TMR very resilient to high voltages.
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