Bound electron pair in a MOS-structure

Abstract

In developing our previous contribution (arXiv:1804.00889) we have numerically found the bound state energy and correspondent wave function of the two electrons confined to move in a quantum well placed close to the gate electrode. Spin-orbit interaction (SOI) and image charge forces result in effective attraction between electrons. We considered also the effect of gate voltage applied to the structure and discovered that this can essentially increase the bound energy of the pair so that it remains stable even at room temperature.