Narrow photoluminescence peak of epitaxial MoS2 on graphene/Ir(111)
Abstract
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS2 on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS2 interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS2 with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS2 and a different thermal expansion of graphene and MoS2. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.
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