Topological phase transition in GeSnH2 induced by biaxial tensile strain: A tight-binding study
Abstract
An effective tight-binding (TB) Hamiltonian for monolayer GeSnH2 is proposed which has an inversion-asymmetric honeycomb structure. The low-energy band structure of our TB model agrees very well with previous ab initio calculations under biaxial tensile strain. We predict a phase transition upon 7.5\% biaxial tensile strain in agreement with DFT calculations. Upon 8.5\% strain the system exhibits a band gap of 134 meV, suitable for room temperature applications. The topological nature of the phase transition is confirmed by: 1)the calculation of the Z2 topological invariant, and 2)quantum transport calculations of disordered GeSnH2 nanoribbons which allows us to determine the universality class of the conductance fluctuations.
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