Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Abstract

Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices.