Non-Born effects in scattering of electrons in a clean conducting tube

Abstract

Quasi-one-dimensional systems demonstrate Van Hove singularities in the density of states F and the resistivity , occurring when the Fermi level E crosses a bottom EN of some subband of transverse quantization. We demonstrate that the character of smearing of the singularities crucially depends on the concentration of impurities. There is a crossover concentration nc |λ|, λ 1 being the dimensionless amplitude of scattering. For n nc the singularities are simply rounded at E-EN τ-1 -- the Born scattering rate. For n nc the non-Born effects in scattering become essential despite λ 1. The peak of the resistivity is asymmetrically split in a Fano-resonance manner (however with a more complex structure). Namely, for >0 there is a broad maximum at λ2 while for <0 there is a deep minimum at || n2 λ2. The behaviour of below the minimum depends on the sign of λ. In case of repulsion monotonically grows with || and saturates for || λ2. In case of attraction has sharp maximum at || λ2. The latter feature is due to resonant scattering by quasistationary bound states that inevitably arise just below the bottom of each subband for any attracting impurity.

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