Highly anisotropic thermoelectric properties of carbon sulfide monolayers

Abstract

Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by strain control on the basis of first-principles calculations. We consider uniaxial and biaxial tensile strain and we find a highly anisotropic electronic and thermoelectonic responses depending on the direction of the applied strain. Our results indicate that strain-induced response could be an effective method to control the electronic response and the thermoelectric performance.