Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure

Abstract

Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters. It is found: under the experimental results of Ref.[19], the large and controllable NRI can be theoretically obtained in the SQWs sample by modulating the coupling laser field and relative phase, and the frequency regions for NRI can also be sensitively manipulated by them, which will more increase flexibility in implementation of NRI material. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.