Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6
Abstract
By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr2Ge2Se6, where the Curie temperature Tc can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr2Ge2Se6 and Cr2Ge2Te6 is predicted to be comparable to that in ferromagnetic metals of Fe and Ni, and is an order of magnitude larger than that in diluted magnetic semiconductor Ga(Mn,As). Based on superexchange interactions, the enhanced Tc in 2D Cr2Ge2Se6 by strain can be understood by the decreased energy difference between 3d orbitals of Cr and 4p orbitals of Se. Our finding highlights the microscopic mechanism to obtain the room temperature ferromagnetic semiconductors by strain.
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