Role of oxygen interstitials in Zn1-xGaxO for faster response to UV light

Abstract

ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing speed. The conductance increases as a consequence of reduced defect states, especially the oxygen vacancies. The photocurrent increases with Galium incorporation, but a more intense increase in the current reduces the sensitivity.