Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

Abstract

We present observations of an anisotropic resistance state at Landau level filling factor =5/2 in a two-dimensional hole system (2DHS), which occurs for certain values of hole density p and average out-of-plane electric field E. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of p and E, and hence the symmetry of the confining potential. For p≈2×1011~cm-2 and E ≈ -2 ×105~V/m, the magnetoresistance along 011 greatly exceeds that along 011, suggesting the formation of a quantum Hall nematic or `stripe' phase. Reversing the sign of E rotates the stripes by 90. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.

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