Effect of synthesis conditions on the electrical resistivity of TiSe2
Abstract
Dilute impurities and growth conditions can drastically affect the transport properties of TiSe2, especially below the charge density wave transition. In this paper, we discuss the effects of cooling rate, annealing time and annealing temperature on the transport properties of TiSe2: slow cooling of polycrystalline TiSe2 post-synthesis drastically increases the low temperature resistivity, which is in contrast to the metallic behavior of single-crystalline TiSe2 due to charge doping from the residual iodine transport agent. A logarithmic increase of resistivity upon cooling and negative magnetoresistance with a sharp cusp around zero field are observed for the first time for the polycrystalline TiSe2 samples, pointing to weak-localization effects due to low dimensionality. Annealing at low temperatures has a similar, but less drastic effect. Furthermore, rapid quenching of the polycrystalline samples from high temperatures freezes in disorder, leading to a decrease in the low temperature resistivity.
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