Theory of Tunneling Effect in 1D AIII-class Topological Insulator (Nanowire) Proximity Coupled with a Superconductor

Abstract

We study the tunneling effect in an AIII-class insulator proximity coupled with a spin-singlet s-wave superconductor, in which three phases are characterized by the integer topological invariant N. By solving the Bogoliubov-de Gennes equation explicitly, we analytically obtain a normal reflection coefficient Rσσ' and an Andreev reflection coefficient Aσσ', and derive a charge conductance formula,where σ(σ') is the spin index of a reflected (injected) wave. The resulting conductance indicates a wide variety of line shapes: (i)gap structure without coherence peaks for N=0, (ii)quantized zero-bias conductance peak (ZBCP) with height 2e2/h for N=1, and (iii)ZBCP spitting for N=2. At zero bias voltage eV=0, Σσσ' Rσσ' = Σσσ' Aσσ' is satisfied and the spin direction of an injected electron is rotated at approximately 90 for the N=1 state. Meanwhile, Aσσ'=0 is satisfied for the N=2 state, and the spin rotation angle can become 180.

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