Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers

Abstract

We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability by using a multi-orbital tight-binding model based on the first-principles band structure. The transmission probability depends on the spin and valley degrees of freedom. This dependence qualitatively changes by the interface structure. The heterostructure with a zig-zag interface preserves the spin and the valley of electron in the transmission process. On the other hand, the armchair interface enables conduction electrons to transmit with changing the valley and increases the conductance in hole-doped junctions due to the valley-flip transmission. We also discuss the spin and valley polarizations of electronic current in the heterojunctions.