Electrical and ELectronic Properties of Strained Mono-layer InTe
Abstract
In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, α, and β phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and ION/IOFF ratio is obtained with respect to biaxial strain.
0
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.