Plasmon effect on the Coulomb pseudopotential μ* in the McMillan equation
Abstract
We examine the Coulomb pseudopotential μ* in the McMillan equation applying to the superconductivity of heavily doped semiconductors. Systematic calculation using the first-principles calculation suggests that μ* should be considered as a variable quantity depending on carrier density n in semiconductors, although it is usually considered as a constant about 0.1. To clarify n-dependence of μ*, we solve the McMillan equation inversely for μ* by combining the result of the first-principles calculation and that of experiments. It indicates that μ* decreases with n and becomes negative under n 5 × 10-21[ cm-3]. This reduction is explained by the effect of plasmon which may play an important role in the superconductivity of low carrier systems such as heavily doped semiconductors.
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