Defect-implantation for the all-electrical detection of non-collinear spin-textures

Abstract

The viability of past, current and future devices for information technology hinges on their sensitivity to the presence of impurities. The latter can lead to resistivity anomalies, the so-called Kondo effect, reshape extrinsically Hall effects or reduce the efficiency of magnetoresistance effects essential in spintronics. Here we demonstrate that atomic defects enable highly efficient all-electrical detection of spin-swirling textures, in particular magnetic skyrmions, which are promising bits candidates in future spintronics devices. Impurities amplify the bare transport signal and can alter significantly the spin-mixing magnetoresistance (XMR) depending on their chemical nature. Both effects are monitored in terms of the defect-enhanced XMR (DXMR) as shown for 3d and 4d transition metal defects implanted at the vicinity of skyrmions generated in PdFe bilayer deposited on Ir(111). The ineluctability of impurities in devices promotes the implementation of DXMR in reading architectures with immediate implications in magnetic storage technologies.