Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits

Abstract

Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a competitive candidate, are quantum dots as qubits. The band structure of TMD monolayers offers a number of different degrees of freedom and combinations thereof as potential qubit bases, primarily electron spin, valley isospin and the combination of the two due to the strong spin orbit coupling known as a Kramers qubit. Pure spin qubits in monolayer MoX$_2$ (where X=S or Se) can be achieved by energetically isolating a single valley and tuning to a spin degenerate regime within that valley by a combination of a sufficiently small quantum dot radius and large perpendicular magnetic field. Within such a TMD spin qubit, we theoretically analyse single qubit rotations induced by electric dipole spin resonance. We employ a rotating wave approximation within a second order time dependent Schrieffer-Wolf effective Hamiltonian to derive analytic expressions for the Rabi frequency of single qubit oscilations, and optimise the mechanism or the parameters to show oscilations up to $250\,{\rm MHz}$.