Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers
Abstract
Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300\, S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.
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