Few-Layer MoS2/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
Abstract
Few-layer molybdenum disulfide (FL-MoS2) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS2. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, λ = 2120 nm) in terms of sensitivities by up to 50 mAW-1. Photodetectivities of up to 2 x 1010 Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range.
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