Densities of states in Fe-doped III-V semiconductors: a first-principles study
Abstract
The electronic structures of Fe-doped III-V semiconductors were studied by first-principles supercell calculation. It was found that their electronic structures are basically the same as those of Mn-doped ones except that the extra electron of Fe compared to Mn occupies either majority-spin p-d hybridized antibonding states (ta,) or minority-spin e states (e) and that the center of gravity of the d partial density of states is higher for Fe than for Mn. The present calculations suggest that ferromagnetism appears when the e states start to be occupied. The band splitting due to s-d hybridization was found to be significantly smaller than the one due to p-d hybridization. This indicates that the s,p-d exchange interaction is not responsible for the high-temperature ferromagnetism of the Fe-doped ferromagnetic semiconductors even in n-type compounds.